Normy JIS - Japonské technické normy - strana 605

Measurement of minority carrier life time in germanium by photoconductive decay method

Norma vydaná dňa 31.3.1978

Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method

Norma vydaná dňa 31.7.1995

Determination of conductivity type in germanium by thermoelectromotive method

Norma vydaná dňa 10.3.1978

Test methods of crystalline defects in silicon by preferential etch techniques

Norma vydaná dňa 29.2.2000

Method of measurement of etch pit density of germanium crystal

Norma vydaná dňa 31.1.1967

Methods of measurement of thickness, thickness variation and bow for silicon wafer

Norma vydaná dňa 28.2.1994

Visual inspection for sliced and lapped silicon wafers

Norma vydaná dňa 5.1.1978

Visual inspection for silicon wafers with specular surfaces

Norma vydaná dňa 31.1.1996

Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

Norma vydaná dňa 21.9.2021

General rules for chemical analysis of copper and copper alloys

Norma vydaná dňa 31.1.2001