Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low current rectifier diodes (up to 3 ampere rating).

NEPLATNÁ vydaná dňa 30.9.1969

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: medium current rectifier diodes (1-100 ampere rating).

NEPLATNÁ vydaná dňa 30.9.1969

Detail specification for medium current rectifier diodes. 3 A, 300 V, 600 V, 900 V, 1200 V, hermetically sealed. Full assessment level.

NEPLATNÁ vydaná dňa 15.6.1974

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high current rectifier diodes (greater than 50 ampere rating).

NEPLATNÁ vydaná dňa 29.5.1970

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: controlled avalanche rectifier diodes.

NEPLATNÁ vydaná dňa 12.1.1972

Dentistry. Brazing materials.
(Stomatologie - Dentální pájky tvrdé.)

NEPLATNÁ vydaná dňa 30.11.2006

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: rectifier bridges. Ambient rated, single phase, in solid (plastics) encapsulation.

NEPLATNÁ vydaná dňa 15.10.1977

Optics and optical instruments. Optical transfer function. Definitions and mathematical relationships.

NEPLATNÁ vydaná dňa 15.2.1996

Optics and photonics. Optical transfer function. Definitions and mathematical relationships.

NEPLATNÁ vydaná dňa 28.9.2007

Optics and optical instruments. Optical transfer function. Principles and procedures of measurement.

NEPLATNÁ vydaná dňa 15.3.1996