Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q.

NEPLATNÁ vydaná dňa 15.5.1971

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: switching diodes.

NEPLATNÁ vydaná dňa 1.6.1976

Rules for the preparation of detail specifications for semiconductor devices of assessed quality. Voltage reference diodes.

NEPLATNÁ vydaná dňa 1.1.1979

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: voltage regulator diodes.

NEPLATNÁ vydaná dňa 30.9.1969

Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q.

NEPLATNÁ vydaná dňa 15.3.1972

Detail specification for silicon voltage regulator diodes. 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation. General application category Q.

NEPLATNÁ vydaná dňa 15.3.1972

Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C.

NEPLATNÁ vydaná dňa 15.3.1972

Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level.

NEPLATNÁ vydaná dňa 15.4.1974

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: transient suppressor diodes.

NEPLATNÁ vydaná dňa 31.5.1990

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: variable capacitance diodes for tuning applications.

NEPLATNÁ vydaná dňa 31.12.1989