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Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification.
NEPLATNÁ vydaná dňa 15.2.1990
Vybraný formát:Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification.
NEPLATNÁ vydaná dňa 15.2.1990
Vybraný formát:Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bipolar transistors for switching applications.
NEPLATNÁ vydaná dňa 15.11.1991
Vybraný formát:Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications.
NEPLATNÁ vydaná dňa 15.11.1991
Vybraný formát:Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A.
NEPLATNÁ vydaná dňa 15.2.1990
Vybraný formát:Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Reverse blocking triode thyristors, ambient and case-rated, up to 100 A.
NEPLATNÁ vydaná dňa 15.2.1990
Vybraný formát:Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bidirectional triode thyristors (triacs), ambient or case-rated, up to 100 A.
NEPLATNÁ vydaná dňa 31.1.1992
Vybraný formát:Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.
NEPLATNÁ vydaná dňa 15.12.1988
Vybraný formát:General criteria for the assessment of testing laboratories.
NEPLATNÁ vydaná dňa 31.10.1989
Vybraný formát:General criteria for laboratory accreditation bodies.
NEPLATNÁ vydaná dňa 31.10.1989
Vybraný formát:Zobrazený záznam od 85960 až 85970 z celkom 90187 záznamov.
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