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Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
Automaticky preložený názov:
Štandardná skúšobná metóda pre separáciu s ionizujúceho žiarenia vyvolanej MOSFET Threshold Voltage Shift na zložky kvôli oxidu Trapped otvory a rozhranie štátmi pomocou subthreshold prúd - napätie Charakteristika
NORMA vydaná dňa 10.5.1998
Označenie normy: ASTM F996-98
Poznámka: NEPLATNÁ
Dátum vydania normy: 10.5.1998
Kód tovaru: NS-57212
Počet strán: 6
Približná hmotnosť: 18 g (0.04 libier)
Krajina: Americká technická norma
Kategória: Technické normy ASTM
Keywords:
Current measurement-semiconductors, Electrical conductors-semiconductors, Gate and field oxides, Ionizing radiation, MOSFETs, Radiation exposure-electronic components/devices, Silicon-semiconductor applications, Threshold voltage, separating a total-dose induced mosfet threshold voltage shift into, ICS Number Code 31.080.30 (Transistors)
1. Scope | ||||||||
1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconducter-field-effect transistor (MOSFET) and an isolation dielectic in a parasitic MOSFET. The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, [delta]VINV into voltage shifts due to oxide trapped charge, [delta]Vot and interface traps, [delta]Vit. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region. 1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results. 1.3 The application of this test method requires the MOSFET to have a substrate (body) contact. MOSFETs on silicon-on-insulator (SOI) technology must have body ties. 1.4 Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current. 1.5 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. |
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2. Referenced Documents | ||||||||
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