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ASTM F616M-96
Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
Automaticky preložený názov:
Štandardné testovacie metóda merania MOSFET Drain únikový prúd ( metrické )
NORMA vydaná dňa 10.6.1996
Informácie o norme:
Označenie normy: ASTM F616M-96
Poznámka: NEPLATNÁ
Dátum vydania normy: 10.6.1996
Kód tovaru: NS-55914
Počet strán: 3
Približná hmotnosť: 9 g (0.02 libier)
Krajina: Americká technická norma
Kategória: Technické normy ASTM
Anotácia textu normy ASTM F616M-96 :
Keywords:
drain leakage current, leakage current, MOSFET, ICS Number Code 17.220.20 (Measurement of electrical and magnetic quantities), 29.045 (Semiconducting materials)
Doplňujúce informácie
| 1. Scope | ||
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1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs. This test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs. 1.3 The d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. |
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| 2. Referenced Documents | ||
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