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ASTM F1725-02
Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots (Withdrawn 2003)
Automaticky preložený názov:
Štandardné Príručka pre analýzu kryštalografických dokonalosti Silicon prúty ( Withdrawn 2003 )
NORMA vydaná dňa 10.12.2002
Informácie o norme:
Označenie normy: ASTM F1725-02
Poznámka: NEPLATNÁ
Dátum vydania normy: 10.12.2002
Kód tovaru: NS-51313
Počet strán: 3
Približná hmotnosť: 9 g (0.02 libier)
Krajina: Americká technická norma
Kategória: Technické normy ASTM
Anotácia textu normy ASTM F1725-02 :
Keywords:
dislocation, grain boundaries, ingot, polycrystaline imperfections, preferential etch, silicon, slip, ICS Number Code 29.045 (Semiconducting materials)
Doplňujúce informácie
| 1. Scope |
|
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect identification, and defect counting. 1.2 This practice is suitable for use if evaluating silicon grown in either [111] or [100] direction and doped either p or n type with resistivity greater than 0.005 Ωcm. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. |
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