Potrebujeme váš súhlas na využitie jednotlivých dát, aby sa vám okrem iného mohli ukazovať informácie týkajúce sa vašich záujmov. Súhlas udelíte kliknutím na tlačidlo „OK“.
Standard Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors (Withdrawn 2003)
Automaticky preložený názov:
Štandardná skúšobná metóda pre generáciu Lifetime a generácie Velocity Silicon materiálu Kapacitné - Time Meranie Metal - Oxide - Silicon ( MOS ) Kondenzátory ( Withdrawn 2003 )
NORMA vydaná dňa 1.1.2000
Označenie normy: ASTM F1388-92(2000)
Poznámka: NEPLATNÁ
Dátum vydania normy: 1.1.2000
Kód tovaru: NS-50129
Počet strán: 7
Približná hmotnosť: 21 g (0.05 libier)
Krajina: Americká technická norma
Kategória: Technické normy ASTM
Keywords:
capacitance-time measurements, C-t measurements, generation lifetime, lifetime, generation velocity, MOS capacitor, silicon, ICS Number Code 31.060.01 (Capacitors in general)
1. Scope |
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This test method covers the measurement of generation lifetime and generation velocity of silicon wafers. 1.2 The measurement requires the fabrication of a guard-ring MOS (Metal-Oxide-Silicon) capacitor. This test method is therefore destructive to the silicon wafer. 1.3 This test may also be applied to semiconductor materials other than silicon and to insulators other than silicon dioxide, but the details of capacitor fabrication and the analyses and interpretation of data in such cases are not given in this test method. 1.4 Both p- and n-type silicon in the doping range from 1013 to 10 17 cm-3 can be evaluated by this test method. The approximate range of generation lifetime that can be measured is 1µs to 10 ms. 1.5 The test method is applicable to both bulk and epitaxial silicon. If epitaxial silicon is used, the epitaxial layer must be of the same conductivity type as the substrate and should be at least twice as thick as the maximum depletion width in deep depletion to avoid errors caused by the proximity of the epitaxial interface (see 12.4). 1.6 It is necessary to complete the measurements described in Test Method F 1153 before performing the measurements described in this test method to determine the values of maximum capacitance, equilibrium minimum capacitance, and doping density. 1.7 A digital computer capable of controlling the instruments and recording data is required and significantly simplifies and improves the accuracy of the data acquisition and analysis process. 1.8 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in 11.5 and 11.8. |
Chcete mať istotu, že používate len platné technické normy?
Ponúkame Vám riešenie, ktoré Vám zaistí mesačný prehľad o aktuálnosti noriem, ktoré používate.
Chcete vedieť viac informácií ? Pozrite sa na túto stránku.
Posledná aktualizácia: 2024-09-27 (Počet položiek: 2 350 600)
© Copyright 2024 NORMSERVIS s.r.o.