Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
NORMA vydaná dňa 7.4.2021
Označenie normy: IEC 63229-ed.1.0
Dátum vydania normy: 7.4.2021
Počet strán: 21
Približná hmotnosť: 63 g (0.14 libier)
Krajina: Medzinárodná technická norma
Kategória: Technické normy IEC
IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.