IEC 63068-5-ed.1.0

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 5: Test method for defects using X-ray topography

NORMA vydaná dňa 6.10.2026

Anglicky -
Elektronické PDF (335.40 EUR)

Anglicky -

Tlačené (335.40 EUR)

Anglicky -

CD-ROM (337.00 EUR)

Informácie o norme:

Označenie normy: IEC 63068-5-ed.1.0
Dátum vydania normy: 6.10.2026
Počet strán: 31
Približná hmotnosť: 93 g (0.21 libier)
Krajina: Medzinárodná technická norma
Kategória: Technické normy IEC

Anotácia textu normy IEC 63068-5-ed.1.0 :

IEC 63068-5:2026 provides definitions and guidance in use of X-ray topography inspection system for detecting defects in silicon carbide (SiC) homoepitaxial wafers. Additionally, this document exemplifies X-ray topographic images to enable the detection and categorization of defects in SiC homoepitaxial wafers.