IEC 63068-4-ed.1.0

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

NORMA vydaná dňa 27.7.2022

Anglicky -
Elektronické PDF (198.70 EUR)

Anglicky -

Tlačené (198.70 EUR)

Anglicky -

CD-ROM (200.30 EUR)

The information about the standard:

Designation standards: IEC 63068-4-ed.1.0
Publication date standards: 27.7.2022
Approximate weight : 300 g (0.66 lbs)
Country: International technical standard
Kategória: Technické normy IEC

Annotation of standard text IEC 63068-4-ed.1.0 :

IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.