IEC 63068-1-ed.1.0

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

NORMA vydaná dňa 30.1.2019

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Informácie o norme:

Označenie normy: IEC 63068-1-ed.1.0
Dátum vydania normy: 30.1.2019
Počet strán: 23
Približná hmotnosť: 69 g (0.15 libier)
Krajina: Medzinárodná technická norma
Kategória: Technické normy IEC

Anotácia textu normy IEC 63068-1-ed.1.0 :

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.