Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Informácie o norme:

Označenie normy: IEC 62373-1-ed.1.0
Dátum vydania normy: 15.7.2020
Približná hmotnosť: 300 g (0.66 libier)
Krajina: Medzinárodná technická norma
Kategória: Technické normy IEC

Anotácia textu normy IEC 62373-1-ed.1.0 :

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document also defines the terms pertaining to the conventional BTI test method. L’IEC 62373-1:2020 fournit la methode de mesure pour un essai rapide de BTI (instabilite en temperature sous polarisation) des transistors a effet de champ metal-oxyde-semiconducteurs (MOSFET) a base de silicium. Le present document definit egalement les termes relatifs a la methode d’essai de BTI conventionnelle.