ASTM F996-98

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

NORMA vydaná dňa 10.5.1998

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Informácie o norme:

Označenie normy: ASTM F996-98
Poznámka: NEPLATNÁ
Dátum vydania normy: 10.5.1998
Počet strán: 6
Približná hmotnosť: 18 g (0.04 libier)
Krajina: Americká technická norma
Kategória: Technické normy ASTM

Anotácia textu normy ASTM F996-98 :

Keywords:
Current measurement-semiconductors, Electrical conductors-semiconductors, Gate and field oxides, Ionizing radiation, MOSFETs, Radiation exposure-electronic components/devices, Silicon-semiconductor applications, Threshold voltage, separating a total-dose induced mosfet threshold voltage shift into, ICS Number Code 31.080.30 (Transistors)