Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
NORMA vydaná dňa 1.1.2011
Označenie normy: ASTM F996-11
Poznámka: NEPLATNÁ
Dátum vydania normy: 1.1.2011
Počet strán: 7
Približná hmotnosť: 21 g (0.05 libier)
Krajina: Americká technická norma
Kategória: Technické normy ASTM
Keywords:
c/v characteristics, current-voltage characteristics, interface states, ionizing radiation, MOSFET, oxide-trapped holes, threshold voltage shift, trapped holes, Current measurement--semiconductors, Electrical conductors (semiconductors), Gate and field oxides, Ionizing radiation, MOSFETs, Radiation exposure--electronic components/devices, Silicon semiconductors, Threshold voltage, ICS Number Code 31.080.30 (Transistors)