ASTM F978-90(1996)e1

Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques (Includes all amendments And changes 3/2/2021).

NORMA vydaná dňa 10.1.2001

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The information about the standard:

Designation standards: ASTM F978-90(1996)e1
Note: NEPLATNÁ
Publication date standards: 10.1.2001
The number of pages: 8
Approximate weight : 24 g (0.05 lbs)
Country: American technical standard
Kategória: Technické normy ASTM

Annotation of standard text ASTM F978-90(1996)e1 :

Keywords:
activation energy, deep levels, DLTS, semiconductor silicon, trap density, transient capacitance, ICS Number Code 29.045 (Semiconducting materials)