Test Method for Determining Carrier Density in Silicon Epitaxial Layers by Capacitance-Voltage Measurements on Fabricated Junction or Schottky Diodes (Withdrawn 2001)

The information about the standard:

Designation standards: ASTM F419-94
Note: NEPLATNÁ
Publication date standards: 1.1.1994
The number of pages: 11
Approximate weight : 33 g (0.07 lbs)
Country: American technical standard
Kategória: Technické normy ASTM

Annotation of standard text ASTM F419-94 :

Keywords:
Capacitance-voltage method, Carrier density (in semiconductors), Density-electronic applications, Dielectric breakdown/strength-semiconductor materials, Diodes, Epitaxial wafer, Gate bias, Inhomogeneities, Junction diode, Net carrier density (in semiconductors), Polished silicon wafers/slices, Resistance and resistivity, Schottky diode, Silicon semiconductors, Single-crystal silicon, Voltage, carrier density-silicon epitaxial layers, by capacitance-voltage