Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements

Informácie o norme:

Označenie normy: ASTM F1153-92(1997)
Poznámka: NEPLATNÁ
Dátum vydania normy: 1.1.1992
Počet strán: 7
Približná hmotnosť: 21 g (0.05 libier)
Krajina: Americká technická norma
Kategória: Technické normy ASTM

Anotácia textu normy ASTM F1153-92(1997) :

Keywords:
Average carrier concentration, Calibration-semiconductor instrumentation, Capacitance, Contamination-semiconductors, Defects-semiconductors, Dielectric constant (permittivity)/dissipation factor, Doping concentration, Electrical conductors-semiconductors, Electromagnetic interference, Equilibrium capacitance, Fixed oxide charge, Flatband capacitance/voltage, Interfacial tension, Inversion, Meal-oxide-silicon (MOS) structures, Minimum depletion layer capacitance