Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics (Withdrawn 2023)
NORMA vydaná dňa 1.3.2018
Označenie normy: ASTM F996-11(2018)
Poznámka: NEPLATNÁ
Dátum vydania normy: 1.3.2018
Počet strán: 7
Približná hmotnosť: 21 g (0.05 libier)
Krajina: Americká technická norma
Kategória: Technické normy ASTM
Keywords:
c/v characteristics, current-voltage characteristics, interface states, ionizing radiation, MOSFET, oxide-trapped holes, threshold voltage shift, trapped holes,, ICS Number Code 31.080.30 (Transistors)